Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2006-08-01
2006-08-01
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S429000, C438S770000
Reexamination Certificate
active
07084043
ABSTRACT:
A method for producing a silicon-on-insulator layer structure on a silicon surface with any desired geometry can locally produce the silicon-on-insulator structure. The method includes formation of mesopores in the silicon surface region, oxidation of the mesopore surface to form silicon oxide and rib regions from silicon in single-crystal form; and execution of a selective epitaxy process that that silicon grows on the uncovered rib regions, selectively with respect to the silicon oxide regions. Rib regions remain in place between adjacent mesopores, this step being ended as soon as a predetermined minimum silicon wall thickness of the rib regions is reached, the uncovering of the rib regions, which are arranged at the end remote from the semiconductor substrate between adjacent mesopores. The method can be used to fabricate a vertical transistor and a memory cell having a select transistor of this type.
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Birner Albert
Breuer Steffen
Goldbach Matthias
Luetzen Joern
Schumann Dirk
Edell Shapiro & Finnan LLC
Infineon - Technologies AG
Lebentritt Michael
Pompey Ron
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