Method of forming a penetration electrode and substrate...

Details Method of forming a penetration electrode and substrate... Method of forming a penetration electrode and substrate...

2006-08-22

2006-08-22

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S637000, C438S639000, C438S666000, C438S667000

Reexamination Certificate

active

07094677

ABSTRACT:
A method of forming a penetration electrode in which an electroconductive substance is inserted into a micropore that has one end blocked off only by wiring and a pad formed by an electroconductive substance without the wiring and pad being broken. In this method of forming a penetration electrode, an electroconductive substance is inserted into the micropore that penetrates a substrate and that has one aperture blocked off by an electroconductive thin film. After a protective member that holds the electroconductive thin film is provided on a surface on the electroconductive thin film side of the substrate, an electroconductive substance is inserted from the other aperture of the micropore.

REFERENCES:
patent: 2002/0192939 (2002-12-01), Sugihara
patent: 2004/0072422 (2004-04-01), Sinha
patent: 2004/0137701 (2004-07-01), Takao
patent: 2005/0282383 (2005-12-01), Farnworth

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