Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2006-11-14
2006-11-14
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S737000, C257S738000, C257S762000, C257S763000, C257S766000, C257S778000, C257S751000, C257S765000, C257S764000, C257S693000, C257S692000, C257S780000, C257S779000, C257S772000, C257S790000, C228S164000, C228S180220, C228S179100
Reexamination Certificate
active
07135770
ABSTRACT:
A columnar bump formed of copper etc. is formed on a wiring film of a semiconductor chip through an interconnected film and an adhesive film in a wafer unit by electrolytic plating in which package formation is possible. An oxidation prevention film is formed of such as gold on an upper surface or a part of the upper surface and side surface. A wet prevention film of such as an oxide film is formed on the columnar bump side as needed. If this bump is soldered to the pad on a packaging substrate, solder gets wet in the whole region of the columnar bump upper surface and only a part of the side surface. Stabilized and reliable junction form can be thus formed. Moreover, since the columnar bump does not fuse, the distance between a semiconductor board and a packaging board is not be narrowed by solder.
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Nishiyama Tomohiro
Tago Masamoto
NEC Corporation
Williams Alexander Oscar
LandOfFree
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