Semiconductor device

Details Semiconductor device Semiconductor device

2006-10-03

2006-10-03

Menz, Douglas (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S301000, C257S302000

Reexamination Certificate

active

07115944

ABSTRACT:
A semiconductor device of the present invention has an insulating gate type field effect transistor portion having an n-type emitter region (3) and an n−silicon substrate (1), which are opposed to each other sandwiching a p-type body region (2), as well as a gate electrode (5a) which is opposed to p-type body region (2) sandwiching a gate insulating film (4a), and also has a stabilizing plate (5b). This stabilizing plate (5b) is made of a conductor or a semiconductor, is opposed to n−silicon substrate (1) sandwiching an insulating film (4, 4b) for a plate, and forms together with n−silicon substrate (1), a capacitor. This stabilizing plate capacitor formed between stabilizing plate (5b) and n−silicon substrate (1) has a capacitance greater than that of the gate-drain capacitor formed between gate electrode (5a) and n−silicon substrate (1).

REFERENCES:
patent: 4994871 (1991-02-01), Chang et al.
patent: 5001078 (1991-03-01), Wada
patent: 5623152 (1997-04-01), Majumdar et al.
patent: 5894149 (1999-04-01), Uenishi et al.
patent: 5895951 (1999-04-01), So et al.
patent: 6040599 (2000-03-01), Takahashi
patent: 6111290 (2000-08-01), Uenishi et al.
patent: 6323717 (2001-11-01), Omura et al.
patent: 6392272 (2002-05-01), Hasegawa
patent: 6396102 (2002-05-01), Calafut
patent: 6465298 (2002-10-01), Forbes et al.
patent: 6566691 (2003-05-01), Inoue et al.
patent: 03-109775 (1991-05-01), None
patent: 05-033546 (1993-04-01), None
patent: 07-50405 (1995-02-01), None
patent: 08-222728 (1996-08-01), None
patent: 08-264772 (1996-10-01), None
patent: 09-275212 (1997-10-01), None
patent: 09-283754 (1997-10-01), None
patent: 09-331063 (1997-12-01), None
patent: 10-308512 (1998-11-01), None
patent: 11-17176 (1999-01-01), None
patent: 11-330466 (1999-11-01), None
“Carrier Stored Trench-Gate Bipolar Transistor (CSTBT)—A Novel Power Device for High Voltage Application”, H. Takahashi et al., 1996 IEEE, pp. 349-352.
“The Field Stop IGBT (FS IGBT)—A New Power Device Concept with a Great Improvement Potential”, T. Laska et al., 2000 IEEE, pp. 355-358.
“NPT-IGBT—Optimizing for Manufacturability”, Darryl Burns et al., 1996 IEEE, pp. 331-334.
“Analysis of IPM Current Oscillation under Short Circuit Condition”, M. Takei et al., Proceedings of the 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto, pp. 89-93.
“4500 V IEGTs having Switching Characteristics Superior to GTO”, Mitsuhiko Kitagawa et al., Proceedings of 1995 International Symposium on Power Semiconductor Devices & ICs, Yokohama, pp. 486-491.
“Concept For the Low Forward Voltage Drop 4500V Trench IGBT”, T. Nitta et al., Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto, pp. 43-46.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3621190