Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2006-06-20

2006-06-20

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000, C257S316000, C257S319000

Reexamination Certificate

active

07064383

ABSTRACT:
A non-volatile memory including a semiconductor substrate, and a SONOS electrode on the semiconductor substrate, where the SONOS electrode has a channel area defined underneath. The memory also includes a first layer in contact with a side of the SONOS electrode, a second layer in contact with another side of the SONOS electrode, a pass electrode in contact with the first layer, a recall electrode in contact with the second layer, and a pair of doped regions in the semiconductor substrate. The pair of doped regions are formed where the SONOS, pass, and recall electrodes are not formed. The memory further includes a pair of extension channels in the semiconductor substrate under the pass and recall electrodes, where the pair of extension channels extend from the doped regions toward the channel area.

REFERENCES:
patent: 6798688 (2004-09-01), Joshi

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