Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-08-29
2006-08-29
Graybill, David E. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S161000
Reexamination Certificate
active
07098091
ABSTRACT:
A method is disclosed for forming a thin film field effect transistor. On a preliminary substrate having at least a glass substrate layer and a buffer layer, source and drain metal regions of the transistor are formed for defining an opening, in which a silicon layer, gate oxide layer, and gate metal layer are formed thereafter. A first photoresist pattern having a two-portion structure is used for selectively removing portions of the gate metal, gate oxide, and silicon layers. After forming a second photoresist pattern with a coverage area smaller than that of the first photoresist pattern, it is used for reducing the gate metal layer. By doping a predetermined impurity in the silicon layer, a source region and drain region of a predetermined type is completed.
REFERENCES:
patent: 4778560 (1988-10-01), Takeda et al.
patent: 5998230 (1999-12-01), Gee-Sung et al.
patent: 6156583 (2000-12-01), Hwang
patent: 6317173 (2001-11-01), Jung et al.
patent: 6338989 (2002-01-01), Ahn et al.
patent: 6376288 (2002-04-01), Jen et al.
patent: 6387740 (2002-05-01), Jen et al.
patent: 6500703 (2002-12-01), Takemura
patent: 6555409 (2003-04-01), Kim et al.
patent: 6586286 (2003-07-01), Park et al.
patent: 6653160 (2003-11-01), Moon et al.
patent: 6680223 (2004-01-01), Yamazaki et al.
patent: 6682961 (2004-01-01), Kim
patent: 6882376 (2005-04-01), Kim et al.
patent: 6905917 (2005-06-01), Song et al.
patent: 6908780 (2005-06-01), Lai
patent: 6969643 (2005-11-01), Kim
patent: 2002/0045299 (2002-04-01), Young
patent: 2002/0160555 (2002-10-01), Hong et al.
patent: 2004/0031991 (2004-02-01), Jang
patent: 2004/0089900 (2004-05-01), Ishikawa et al.
patent: 465117 (2001-11-01), None
Au Optronics Corporation
Graybill David E.
LandOfFree
Method for fabricating thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating thin film transistors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3619133