Semiconductor device having contact plug and buried...

Details Semiconductor device having contact plug and buried... Semiconductor device having contact plug and buried...

2006-04-25

2006-04-25

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257S773000, C257S301000, C257S505000, C257S748000, C257S304000, C257S303000, C257S762000, C257S764000, C257S767000, C257S766000

Reexamination Certificate

active

07034398

ABSTRACT:
A semiconductor device includes an active element structure that is formed on a semiconductor substrate and has a connection region formed in the surface of the semiconductor substrate. A contact hole extends from a surface of a first insulating film formed on the semiconductor substrate to the connection region. A contact plug is provided in the contact hole. A clearance formed in the contact plug is formed with a buried conductive film consisting of a material different from the contact plug. The buried conductive film has a continuous surface without forming a step with the surface of the contact plug.

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