MOSFET structure with multiple self-aligned silicide contacts

Details MOSFET structure with multiple self-aligned silicide contacts MOSFET structure with multiple self-aligned silicide contacts

2006-10-31

2006-10-31

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S384000, C257S336000, C257S344000, C257S342000, C257SE21439, C257SE29156

Reexamination Certificate

active

07129548

ABSTRACT:
A metal oxide semiconductor field effect transistor (MOSFET) structure that includes multiple and distinct self-aligned silicide contacts and methods of fabricating the same are provided. The MOSFET structure includes at least one metal oxide semiconductor field effect transistor having a gate conductor including a gate edge located on a surface of a Si-containing substrate; a first inner silicide having an edge that is substantially aligned to the gate edge of the at least one metal oxide semiconductor field effect transistor; and a second outer silicide located adjacent to the first inner silicide. In accordance with the present invention, the second outer silicide has second thickness is greater than the first thickness of the first inner silicide. Moreover, the second outer silicide has a resistivity that is lower than the resistivity of the first inner silicide.

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