Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2006-05-30
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257S350000, C257S351000, C257S506000, C257S510000, C257S513000, C257S514000, C438S219000, C438S295000, C438S404000, C438S405000
Reexamination Certificate
active
07053451
ABSTRACT:
In formation of a source/drain region of an NMOS transistor, a gate-directional extension region <41a> of an N+block region <41> in an N+block resist film <51> prevents a well region <11> located under the gate-directional extension region <41a> from implantation of an N-type impurity. A high resistance forming region, which is the well region <11> having a possibility for implantation of an N-type impurity on a longitudinal extension of a gate electrode <9>, can be formed as a high resistance forming region <A2> narrower than a conventional high resistance forming region <A1>. Thus, a semiconductor device having a partially isolated body fixed SOI structure capable of reducing body resistance and a method of manufacturing the same are obtained.
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Ipposhi Takashi
Iwamatsu Toshiaki
Maeda Shigenobu
Fourson George
McDermott Will & Emery LLP
Pham Thanh V.
Renesas Technology Corp.
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