Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-09
2006-05-09
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S625000, C438S627000, C438S648000, C438S678000
Reexamination Certificate
active
07041595
ABSTRACT:
A barrier layer material and method of forming the same is disclosed. The method includes depositing a graded metal nitride layer in a single deposition chamber, with a high nitrogen content at a lower surface and a high metal content at an upper surface. In the illustrated embodiment, a metal nitride with a 1:1 nitrogen-to-metal ratio is initially deposited into a deep void, such as a via or trench, by reactive sputtering of a metal target in nitrogen atmosphere. After an initial thickness is deposited, flow of nitrogen source gas is reduced and sputtering continues, producing a metal nitride with a graded nitrogen content. After the nitrogen is stopped, deposition continues, resulting in a substantially pure metal top layer. This three-stage layer includes a highly conductive top layer, upon which copper can be directly electroplated without a separate seed layer deposition. Advantageously, native oxide on the top metal surface can be cleaned in situ by reversing polarity in the electroplating solution just prior to plating.
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Wolf, Silicon Processing for VLSI Era, vol. 4, 740-747, Lattice Press, 2002.
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Picardat Kevin M.
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