Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-24
2006-10-24
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S311000, C257SE27086
Reexamination Certificate
active
07126180
ABSTRACT:
In a method of manufacturing a semiconductor device including a capacitor having improved structural stability and enhanced capacitance, a contact region is formed on a surface portion of a semiconductor substrate. After a mold layer is formed on the substrate, a stabilizing member is formed to encompass a storage electrode. A contact hole is formed through the mold layer to expose a sidewall of the stabilizing member and the contact region. The storage electrode is formed on the exposed contact region and on the exposed sidewall of the stabilizing member. A dielectric layer and a plate electrode are successively formed on the storage electrode. The capacitor including the storage electrode and the stabilizing member will have improved structural stability that resists mechanical collapse even when the capacitor has an extremely high aspect ratio.
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Lee Eugene
Marger & Johnson & McCollom, P.C.
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