Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-17
2006-10-17
Tran, Long (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27092, C438S243000, C438S386000
Reexamination Certificate
active
07122855
ABSTRACT:
A semiconductor memory device includes a trench formed in the semiconductor substrate, a diffusion layer for a first electrode formed within the semiconductor substrate so as to be in contact with an inner surface of the trench, a capacitor insulating film formed on the diffusion layer, a conductive layer for a second electrode formed so as to bury a lower portion of the trench, a first insulating film formed on the conductive layer and along a side surface of the trench, a first conductive layer formed so as to bury an intermediate portion of the trench, a first contact layer formed so as to bury an upper portion of the trench, and a second contact layer formed on the surface of the semiconductor substrate so as to be in contact with the first contact layer.
REFERENCES:
patent: 5998821 (1999-12-01), Hieda et al.
patent: 6008513 (1999-12-01), Chen
patent: 2005/0110067 (2005-05-01), Tanaka et al.
patent: 2002-118240 (2002-04-01), None
U.S. Appl. No. 11/311,268, filed Dec. 20, 2005, Kito et al.
Kito Masaru
Tanaka Toshiharu
LandOfFree
Semiconductor memory device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3616114