Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-23
2006-05-23
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S311000, C257S295000, C257S306000, C257S296000
Reexamination Certificate
active
07049650
ABSTRACT:
A semiconductor device comprises a capacitor including a bottom electrode, a top electrode, and a dielectric film, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a conductive metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film, the dielectric film including an insulating metal oxide film having a perovskite structure, the insulating metal oxide film being expressed by A(ZrxTi1-x)O3(A is at least one A site element, 0<x<0.35).
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U.S. Appl. No. 10/986,060, filed Nov. 12, 2004, Itokawa et al.
Itokawa Hiroshi
Yamakawa Koji
Budd Paul
Eckert George
Kabushiki Kaisha Toshiba
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