Single transistor rare earth manganite ferroelectric...

Details Single transistor rare earth manganite ferroelectric... Single transistor rare earth manganite ferroelectric...

2006-04-18

2006-04-18

Potter, Roy (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07030435

ABSTRACT:
A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods of making the same.

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