Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-06-20
2006-06-20
Owens, Douglas W (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S753000, C257S758000
Reexamination Certificate
active
07064437
ABSTRACT:
There is provided a semiconductor device having high reliability, high yield, and such a interconnection structure as short hardly occurs. The semiconductor device comprises a semiconductor substrate, metal conductors formed on a side of a main face of the substrate which metal conductors contain aluminum as main constituent thereof and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.
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Iwasaki Tomio
Miura Hideo
Nakajima Takashi
Nishihara Shinji
Ohta Hiroyuki
Hitachi , Ltd.
Owens Douglas W
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