Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-04-11
2006-04-11
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S055000
Reexamination Certificate
active
07027324
ABSTRACT:
A method and system for providing a magnetic memory including magnetic memory cells associated with a word line segment is disclosed. The magnetic memory cell includes a magnetic storage device and an isolation device. The isolation device is coupled to the magnetic tunneling junction and with a combined word line for reading and writing to the magnetic memory cell. The magnetic storage device and the isolation device are configured such that no direct current path to ground exists during the writing to the magnetic memory cell. In one aspect, in a write mode, the combined word line associated with the word line segment and the word line segment are activated. In the read mode, at least a portion of the memory cells associated with the word line segment are selected using the combined word line.
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Shi Xizeng
Wang Po-Kang
Yang Bruce Yee
Yang Hsu Kai (Karl)
Applied Spintronics Technology, Inc.
Headway Technologies Inc.
Le Thong Q.
Sawyer Law Group LLP
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