Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-08-01
2006-08-01
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S213000, C257S590000
Reexamination Certificate
active
07084429
ABSTRACT:
One aspect of the present invention relates to a method for forming a strained semiconductor structure. In various embodiments, at least two strong bonding regions are defined for a desired bond between a crystalline semiconductor membrane and a crystalline semiconductor substrate. The two strong bonding regions are separated by a weak bonding region. The membrane is bonded to the substrate at a predetermined misorientation. The membrane is pinned to the substrate in the strong bonding regions. The predetermined misorientation provides the membrane in the weak bonding region with a desired strain. In various embodiments, the membrane is bonded to the substrate at a predetermined twist angle to biaxially strain the membrane in the weak bonding region. In various embodiments, the membrane is bonded to the substrate at a predetermined tilt angle to uniaxially strain the membrane in the weak bonding region. Other aspects are provided herein.
REFERENCES:
patent: 5234535 (1993-08-01), Beyer et al.
patent: 5441591 (1995-08-01), Imthurn et al.
patent: 5461243 (1995-10-01), Ek et al.
patent: 5759898 (1998-06-01), Ek et al.
patent: 5854501 (1998-12-01), Kao
patent: 5879996 (1999-03-01), Forbes
patent: 5963817 (1999-10-01), Chu et al.
patent: 6103598 (2000-08-01), Yamagata et al.
patent: 6136666 (2000-10-01), So
patent: 6143628 (2000-11-01), Sato et al.
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6251751 (2001-06-01), Chu et al.
patent: 6423613 (2002-07-01), Geusic
patent: 6514836 (2003-02-01), Belford
patent: 6515335 (2003-02-01), Christiansen et al.
patent: 6583437 (2003-06-01), Mizuno et al.
patent: 6593625 (2003-07-01), Christiansen et al.
patent: 6630713 (2003-10-01), Geusic
patent: 6649492 (2003-11-01), Chu et al.
patent: 6689671 (2004-02-01), Yu et al.
patent: 6703293 (2004-03-01), Tweet et al.
patent: 6703648 (2004-03-01), Xiang et al.
patent: 6740913 (2004-05-01), Doyle et al.
patent: 6812508 (2004-11-01), Fukumi
patent: 2002/0185686 (2002-12-01), Christiansen et al.
patent: 2003/0013323 (2003-01-01), Hammond et al.
patent: 2003/0201469 (2003-10-01), Christiansen et al.
patent: 2003/0218189 (2003-11-01), Christiansen et al.
patent: 2004/0173798 (2004-09-01), Forbes
patent: 2004/0214366 (2004-10-01), Segal et al.
patent: 2004/0217391 (2004-11-01), Forbes
patent: 2004/0224480 (2004-11-01), Forbes
patent: 2004/0232422 (2004-11-01), Forbes
patent: 2004/0232487 (2004-11-01), Forbes
patent: 2004/0232488 (2004-11-01), Forbes
patent: 2005/0020094 (2005-01-01), Forbes et al.
patent: 2005/0023612 (2005-02-01), Forbes
patent: 2005/0023616 (2005-02-01), Forbes
patent: 2005/0029619 (2005-02-01), Forbes
patent: 2005/0032296 (2005-02-01), Forbes
patent: 54-155770 (1979-12-01), None
“Cornell Demonstrates a Universal Substrate”,Compound Semiconductor, 3(2), (Mar./Apr. 1997), 27-29.
Abe, T , “Silicon Wafer-Bonding Process Technology for SOI Structures”,Extended Abstracts of the 22nd(1990 International)Conference on Solid State Devices and Materials, (1990), 853-856.
Auberton-Herve, A J., “SOI: Materials to Systems”,International Electron Devices Meeting. Technical Digest, (1996), 3-10.
Autumn, Kellar , et al., “Adhesive force of a single gecko foot-hair”,Nature, 405(6787), (Jun. 2000) ,681-685.
Autumn, Kellar , et al., “Evidence for van der Waals adhesion in gecko setae.”,Proceedings of the National Academy of Science U S A.;99(19), (Sep. 17, 2002), 12252-6.
Belford, Rona E., et al., “Performance-Augmented CMOS Using Back-End Uniaxial Strain”,IEEE 60th DRC. Conference Digest Device Research Conference, 2002, (Jun. 24-26, 2002), 41-42.
Berti, M. , “Composition and Structure of Si-Ge Layers Produced by Ion Implantation and Laser Melting”,Journal of Materials Research, 6(10), (Oct. 1991), 2120-2126.
Berti, M. , “Laser Induced Epitaxial Regrowth of Si[sub 1-x]Ge[sub x]/Si Layers Produced by Ge Ion Implantation”,Applied Surface Science, 43, (1989), 158-164.
Biever, Celeste , “Secret of ‘strained silicon’ revealed: behind closed doors, Intel has perfected a novel way to improve chip performance.”,New Scientist, 180(i2426-2428), (Dec. 20, 2003), 27.
Chilton, B T., et al., “Solid phase epitaxial regrowth of strained Si(1-x)Ge(x)/Si strained layer structures amorphized by ion implantation”,Applied Physics Letters, 54(1), (Jan. 2, 1989), 42-44.
Dharmatilleke, S N., et al., “Anodic Bonding of Glass to Glass and Silicon to Glass or Silicon to Silicon Through a Very Thick Thermally Grown SiO2 Layer”,Proceedings of IS 3M International Symposium on Smart Structures and Microsystems,http://dolphin.eng.uc.edu/projects/bonding/paper.pdf, (2000), 32.
Dubbelday, W B., et al., “Oscillatory strain relaxation in solid phase epitaxially regrown silicon on sapphire”,Proceedings of the First International Workshop Lattice Mismatched Thin Films,(Sep. 13-15, 1998), 13-17.
Fischetti, M V., et al., “Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys”,Journal of Applied Physics, 80(4), (Aug. 15 1996), 2234-2252.
Garcia, G A., et al., “High-quality CMOS in thin (100 nm) silicon on sapphire”,IEEE Electron Device Letters, 9(1), (Jan. 1988), 32-34.
Harendt, Christine , “Silicon on Insulator Material by Wafer Bonding”,Journal of Electronic Materials, 20(3), (Mar. 1991), 267-77.
Imthurn, George P., et al., “Bonded Silicon-on-Sapphire Wafers and Devices”,Journal of Applied Physics, 72(6), (Sep. 1992), 2526-7.
Lasky, J. B., “Wafer Bonding for Silicon-on-Insulator Technologies”,Applied Physics Letters, 48(1), (Jan. 6, 1986), 78-80.
Lu, D, , “Bonding Silicon Wafers by Use of Electrostatic Fields Followed by Rapid Thermal Heating”,Materials Letters4(11), (Oct. 1986), 461-464.
Mizuno, T , et al., “Advanced SOI-MOSFETs with Strained-Si Channel for High Speed CMOS Electron/Hole Mobility Enhancement”,2000 Symposium on VLSI Technology. Digest of Technical Papers,, (2000), 210-211.
O'Neill, A G., et al., “High speed deep sub-micron MOSFET using high mobility strained silicon channel”,ESSDERC '95. Proceedings of the 25th European Solid State Device Research Conference,(Sep. 1995), 109-12.
Omi, Hiroo , et al., “Semiconductor Surface with Strain Control”, http://www.brl.ntt.co.jp/J/kouhou/katsudou/report00/E/report04—e.html.
Paine, D. C., “The Growth of Strained Si-xGex Alloys on (100) Silicon Using Solid Phase Epitaxy”,Journal of Materials Research, 5 (5), (May 1990), 1023-1031.
People, R. , “Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures”,Applied Physics Letters, 47 (3), (Aug. 1, 1985), 322-4.
Rim, Kern , et al., “Fabrication and analysis of deep submicron strained-Si n-MOSFET's”,IEEE Transactions on Electron Devices, 47(7), (Jul. 2000), 1406-1415.
Rim, Kern , et al., “Strained Si NMOSFETs for High Performance CMOS Technology”,2001 Symposium on VLSI Technology. Digest of Technical Papers,(2001), 59-60.
Rim, Kern , et al., “Transconductance enhancement in deep submicron strained Si n-MOSFETs”,International Electron Devices Meeting 1998. Technical Digest,(1998), 707-710.
Sugiyama, N , et al., “Formation of strained-silicon layer on thin relaxed-SiGe/SiO/sub 2//Si structure using SIMOX technology”,Thin Solid Films, 369(1-2), (Jul. 2000), 199-202.
Takagi, Shin-Ichi , “Strained-Si- and SiGe-On-Insulator (Strained-SOI and SGOI) MOSFETs for High Performance/Low Power CMOS Application”,IEEE Device Research Conference, 2002. 60th DRC. Conference Digest,(2002), 37-40.
Welser, J , et al., “Strain dependence of the performance enhancement in strained-Si n-MOSFETs”,IEEE International Electron Devices Meeting 1994. Technical Digest,(Dec. 11-14, 1994), 373-376.
Abraham Fetsum
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Strained semiconductor by wafer bonding with misorientation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Strained semiconductor by wafer bonding with misorientation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Strained semiconductor by wafer bonding with misorientation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3614048