Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2006-04-04
2006-04-04
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S189011, C365S230060, C365S207000
Reexamination Certificate
active
07023721
ABSTRACT:
A semiconductor integrated circuit device including a plurality of memory cells, each having a storage MOSFET holding information in a gate of the storage MOSFET, a write transistor supplying a write information voltage corresponding to the information to the gate storage MOSFET, and a capacitor having first and second terminals. Word lines and data lines are coupled with the memory cells. The first capacitor terminal is coupled with one of the word lines and the second capacitor terminal is coupled with the gate of the storage MOSFET. In a read operation of the semiconductor integrated circuit device, the gate voltage of the storage MOSFET is boosted by a transition of the word line from a first voltage to a second voltage greater than the first voltage.
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Itoh Kiyoo
Nakazato Kazuo
Antonelli, Terry Stout and Kraus, LLP.
Auduong Gene N.
Hitachi , Ltd.
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