Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-07
2006-03-07
Wille, Douglas (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S506000
Reexamination Certificate
active
07009249
ABSTRACT:
A method of manufacturing a semiconductor device is provided. The method includes providing a device isolation region for defining a device region on a mono-crystalline semiconductor layer of an SOI substrate formed with a mono-crystalline semiconductor layer through an embedded insulation payer on a semiconductor substrate of a first conductivity type. An opening is formed penetrating the device isolation region and the embedded insulation layer and reaching the semiconductor substrate. A polysilicon is deposited on the SOI substrate and within the opening and providing a gate electrode and a substrate electrode of the MIS type field-effect transistor by executing the patterning thereon; and implanting impurities into the gate electrode and the substrate electrode.
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Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Wille Douglas
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