Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S066000, C257S072000, C257S350000, C257S351000, C257S352000, C257S344000, C257S408000
Reexamination Certificate
active
07087962
ABSTRACT:
A MOS transistor having a LDD structure is described. In accordance with the present invention a MOS transistor includes a low impurity concentration region formed in a semiconductor film between an end of a gate electrode and a source or drain. The transistor includes an insulating film extending beyond the gate electrode in the direction of the source and drain, the insulating film having a thicker portion over the channel region of the semiconductor film and a thinner portion over the source and drain regions of the semiconductor film, such that LDD regions can be formed by utilizing the thickness difference between the thick portion of the insulating film and the thin portion of the insulating.
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Costellia Jeffrey L.
Loke Steven
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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