Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-03-21

2006-03-21

Wilson, Christian D. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S202000, C257S249000, C257S250000, C257S270000, C257S314000, C257S315000

Reexamination Certificate

active

07015550

ABSTRACT:
A memory cell and a selection transistor for selecting the memory cell are provided. The memory cell includes a floating gate formed on a semiconductor substrate via a first gate insulation film, a pair of first diffusion layers positioned on the opposite sides of the floating gate and formed in the substrate, first and second control gates formed on the opposite sides of the floating gate to drive the floating gate, and an inter-gate insulation film formed between the first and second control gates and the floating gate. The selection transistor includes a selection gate•wiring including a first portion constituted of the same conductive layer as the first conductive layer, and a second portion constituted of the same conductive layer as the second conductive layer, and a second diffusion layer formed in the substrate, facing the second portion of the selection gate•wiring.

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