Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-15
2006-08-15
Sarkar, Asok Kumar (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27064, C257SE21638
Reexamination Certificate
active
07091563
ABSTRACT:
A method for manufacturing an integrated circuit that has a plurality of semiconductor devices including an n-type field effect transistor and a p-type field effect transistor. This method involves depositing oxide fill on the n-type transistor and the p-type transistor and chemical/mechanical polishing the deposited oxide fill such that a gate stack of the n-type transistor and a gate stack of the p-type transistor, which each have spacers which are surrounded with oxide. The method further involves etching a portion of the polysilicon from a gate of the p-type field effect transistor, depositing a low resistance material (e.g., Co, Ni, Ti, or other similar metals) on the n-type field effect transistor and the p-type field effect transistor, and heating the integrated circuit such that the deposited material reacts with the polysilicon of the n-type transistor and the polysilicon of the p-type transistor to form silicide. The silicide formed on the p-type polysilicon imposes compressive mechanical stresses along the longitudinal direction of the channel of the p-type field effect transistor. A semiconductor device formed by this method has compressive stresses along the length of the PFET channel and tensile stresses along the length of the NFET channel.
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Chidambarrao Dureseti
Dokumaci Omer H.
Abate Esq. Joseph P.
Greenblum & Bernstein P.L.C.
Sarkar Asok Kumar
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