Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-04-25

2006-04-25

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S664000, C438S683000

Reexamination Certificate

active

07033933

ABSTRACT:
A breakdown voltage of a capacitive element is improved by re-crystallizing a tungsten silicide film under a dielectric film. In forming the capacitive element which uses a polycrystalline silicon film and the tungsten silicide film as a lower electrode, the tungsten silicide film is re-crystallized by heating using an RTA (Rapid Thermal Annealing) system before forming a silicon oxide film used as the dielectric film. By doing so, an interface between the silicon oxide film and the tungsten silicide film is prevented from becoming uneven and a breakdown voltage of the dielectric film is improved drastically. Thus an amount of electric charge stored in the capacitive element is increased as well as it is made possible that the capacitive element is applied to a semiconductor device operating at higher voltage.

REFERENCES:
patent: 5656529 (1997-08-01), Fukase
patent: 6087240 (2000-07-01), Gilchrist
patent: 6281118 (2001-08-01), Park
patent: 6440848 (2002-08-01), Hong
patent: 2004/0259369 (2004-12-01), Dong et al.
patent: 6-061423 (1994-03-01), None
patent: 2705476 (1998-01-01), None

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