Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-08-01
2006-08-01
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S158000, C365S171000, C365S189110
Reexamination Certificate
active
07085174
ABSTRACT:
First and second current drivers are connected to one end of corresponding first and second write bit lines, respectively, and the first and second write bit lines are directly connected, at the other end, to a common line. The first and second current drivers receive a first power supply voltage and the ground voltage, while the common line receives a second power supply voltage higher than the ground voltage and lower than the first power supply voltage. The first and second current drivers cause a current for data writing to flow in a first direction based on a voltage difference between the first power supply voltage and the second power supply voltage, and cause a current for data writing to flow in a second direction based on a voltage difference between the second power supply voltage and the ground voltage.
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patent: 6879513 (2005-04-01), Ooishi
patent: 2002-93144 (2002-03-01), None
R. Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, ISSCC Digest of Technical Papers, 2000 IEEE International Solid-State Circuits Conference., TA 7.2, Feb. 2000.
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McDermott Will & Emery LLP
Nguyen Tan T.
Renesas Technology Corp.
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