Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-15
1998-08-25
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438647, 438645, 438648, 438688, 20419217, H01L 2128
Patent
active
057983003
ABSTRACT:
A method of forming electromigration resistant integrated circuit runners is disclosed. A collimated beam of particles is directed toward a substrate to form a metal nucleating layer. Then a non-collimated beam is used to form the rest of the metal layer. Then the layers are patterned to form runners.
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Chittipeddi Sailesh
Merchant Sailesh Mansinh
Bilodeau Thomas G.
Lucent Technologies - Inc.
Niebling John
Rehberg John T.
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