Method of automatically generating dummy metals for multilevel i

Details Method of automatically generating dummy metals for multilevel i Method of automatically generating dummy metals for multilevel i

1996-02-09

1998-08-25

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438631, 438926, H01L 2128

Patent

active

057982988

ABSTRACT:
A method of automatically generating dummy metals for multilevel interconnection makes use of a quantum array pattern accompanying an operating pattern to from a metal pattern. The method comprises the combination selected from intersection (AND), union (OR), oversizing, downsizing, or incorporation operation through computer-aided design (CAD). Therefore, the application of the metal pattern to a process for fabricating a multimetal structure can acquire full planarization between two metal layers because of the arrangement that several dummy metals are positioned among the metal lines to diminish the spacing which exceeds the planarization limit. Also, the dummy metals are shaped in blocks thereby preventing the loading effect during etching and decreasing the parasitic capacitance therebetween.

REFERENCES:
patent: 5441915 (1995-08-01), Lee
patent: 5459093 (1995-10-01), Kuroda et al.
patent: 5597668 (1997-01-01), Nowak et al.

Affiliated with

Also associated with

Rating

Method of automatically generating dummy metals for multilevel i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of automatically generating dummy metals for multilevel i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of automatically generating dummy metals for multilevel i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-36061