Organic thin-film transistor, organic thin-film transistor...

Details Organic thin-film transistor, organic thin-film transistor... Organic thin-film transistor, organic thin-film transistor...

2006-03-28

2006-03-28

Pham, Hoai (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S158000

Reexamination Certificate

active

07018872

ABSTRACT:
A method for manufacturing an organic thin-film transistor, comprising a substrate, a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode, is disclosed, wherein the method comprises the steps of forming the gate electrode on the substrate, forming the gate insulation layer on the substrate, forming the semiconductor layer on the substrate, applying a metal particle dispersion containing metal particles on the substrate, gate insulation layer or organic semiconductor layer to form an electrode precursor layer comprised of the metal particles, and heat-fusing the metal particles in the electrode precursor layer to form the source electrode and the drain electrode.

REFERENCES:
patent: 3740523 (1973-06-01), Cohen et al.
patent: 5958288 (1999-09-01), Mueller et al.
patent: 6337284 (2002-01-01), Hwang et al.
patent: 6514801 (2003-02-01), Yudasaka et al.
patent: 2003/0102472 (2003-06-01), Kelley et al.

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