Method and system for source switching and in-situ plasma...

Details Method and system for source switching and in-situ plasma... Method and system for source switching and in-situ plasma...

2006-07-18

2006-07-18

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S456000, C438S457000, C438S458000, C438S798000

Reexamination Certificate

active

07078317

ABSTRACT:
A system for in-situ plasma treatment. The system has a processing chamber, e.g., plasma chamber. The system has a first susceptor coupled within the chamber and a second susceptor facing the first susceptor and being within the chamber. The system has one or more power sources. Preferably, a first power source is characterized by a first frequency. The first power source is coupled to the first susceptor and the second susceptor. A second power source is characterized by a second frequency. The second power source is coupled to the first susceptor and the second susceptor. A switching device is coupled to the first power source and is coupled the second power source. The switching device is configured to selectively apply the first frequency to the first susceptor while the second frequency is applied to the second susceptor and is alternatively configured to selectively apply the first frequency to the second susceptor while the second frequency is applied to the first susceptor.

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