Semiconductor component, method for producing the...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S409000, C257S411000

Reexamination Certificate

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07053454

ABSTRACT:
A fabrication method produces an integrated component on a semiconductor substrate and having a plurality of electrode connections formed to project from to the main surface of the substrate. The electrode connections are simultaneously formed by removing the electrode connection layer and/or the insulation covering layer in regions adjoining the electrode connections. Furthermore, electrical connections are produced between individual circuit elements formed on or in a semiconductor substrate, interconnect channels being made in the planarized area with circuit elements and filling material. The interconnect channels are filled with a readily conductive material. The semiconductor component has a plurality of electrode connections that project from the substrate.

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patent: WO 98/53492 (1998-11-01), None
Widmann, D. et al.: “Technologie hochintegrierter Schaltungen” [Technology High-Density Integrated Circuits], Springer Verlag, 2ndEdition, 1996.
Alvarez, A. R.: “BiCMOS Technology and Applications”, Kluwer Academic Publishers, 1989.

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