Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-30
2006-05-30
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S409000, C257S411000
Reexamination Certificate
active
07053454
ABSTRACT:
A fabrication method produces an integrated component on a semiconductor substrate and having a plurality of electrode connections formed to project from to the main surface of the substrate. The electrode connections are simultaneously formed by removing the electrode connection layer and/or the insulation covering layer in regions adjoining the electrode connections. Furthermore, electrical connections are produced between individual circuit elements formed on or in a semiconductor substrate, interconnect channels being made in the planarized area with circuit elements and filling material. The interconnect channels are filled with a readily conductive material. The semiconductor component has a plurality of electrode connections that project from the substrate.
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Cappellani Annalisa
Lachner Rudolf
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
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