Method of manufacturing a gas flow type sensor

Details Method of manufacturing a gas flow type sensor Method of manufacturing a gas flow type sensor

1995-04-03

1997-04-15

Dang, Trung

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438456, 216 2, H01L 21302

Patent

active

056209290

ABSTRACT:
A gas flow type sensor with heat-wire bridge having an excellent performance which is attained by optimizing a sputtering process and a heat treatment process for forming a three-layer film (SiN-Pt-SiN) on a semiconductor substrate and improving interfacial adhesion of the three layers and, at the same time, effectively reducing any interfacial stress produced therein. The process comprises a film forming process for sequentially depositing by sputtering SiN, Pt and SiN in three layers on a semiconductor substrate and a heat treatment process for heat treatment of the coated films at a temperature up to 600.degree. C.

REFERENCES:
patent: 4784721 (1988-11-01), Holmen et al.
patent: 4895616 (1990-01-01), Higashi et al.
patent: 4952904 (1990-08-01), Johnson et al.

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