Method for producing semiconductor device with a gate insulating

Details Method for producing semiconductor device with a gate insulating Method for producing semiconductor device with a gate insulating

1995-06-22

1997-04-15

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438909, 438762, 438771, 438591, H01L 21318, H01L 2184

Patent

active

056209100

ABSTRACT:
In an insulated gate type field effect semiconductor device having a thin silicon semiconductor film, the gate insulating film that covers the active layer is a thin film consisting essentially of silicon, oxygen and nitrogen. In the gate insulating film in the device, the nitrogen content is made the largest in the interface between the film and the adjacent gate electrode, and the material constituting the gate electrode is prevented from being diffused into the gate insulating film. In the film, the nitrogen content is made the largest in the interface between the film and the adjacent active layer, and hydrogen ions, etc. are prevented from being diffused from the active layer into the gate insulating film. Prior to the formation of the gate insulating film, the surface of the active layer is irradiated to laser rays or intense rays comparable to laser rays, so as to be oxidized or nitrided.

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