Strained semiconductor device structures

Details Strained semiconductor device structures Strained semiconductor device structures

2006-09-05

2006-09-05

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S377000, C257S383000, C257S384000, C257S385000, C257S396000, C257S397000, C257S401000, C257S496000, C257S621000, C257S622000, C257S798000, C257SE29258

Reexamination Certificate

active

07102201

ABSTRACT:
Semiconductor fabrication methods and structures, devices and integrated circuits characterized by enhanced operating performance. The structures generally include first and second source/drain regions formed in a body of a semiconductor material and a channel region defined in the body between the first and second source/drain regions. Disposed in at least one of the first and second source/drain regions are a plurality of plugs each formed from a volume-expanded material that transfers compressive stress to the channel region. The compressively strained channel region may be useful, for example, for improving the operating performance of p-channel field effect transistors (PFET's).

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