Method of fabricating a gate having a barrier of titanium silici

Details Method of fabricating a gate having a barrier of titanium silici Method of fabricating a gate having a barrier of titanium silici

1996-05-17

1998-08-25

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438653, 438655, 438656, 438657, 438659, H01L 2128

Patent

active

057982961

ABSTRACT:
A method of fabricating a gate having a barrier layer of titanium silicide is comprised of the steps of forming a layer of gate oxide. The gate oxide may be formed using a standard LOCOS process. A layer of doped polysilicon is deposited over the layer of gate oxide. A layer of titanium silicide is formed in a predetermined relationship with respect the layer of doped polysilicon, i.e., it may be deposited on top of the polysilicon or formed in a top surface of the polysilicon layer. A layer of tungsten silicide is deposited on top of the layer of titanium silicide. The layers of gate oxide, doped polysilicon, titanium silicide, and tungsten silicide are etched to form the gate. A gate thus fabricated is also disclosed.

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patent: 5202287 (1993-04-01), Joshi et al.
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