Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2006-05-02
2006-05-02
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S514000, C438S478000
Reexamination Certificate
active
07037815
ABSTRACT:
A method for forming an ultra-shallow junction in a semiconductor substrate is provided. A semiconductor substrate having a top surface is prepared. A dielectric layer is then formed on the top surface. A first ion implantation process is carried out to implant a plurality of heavy ions into the dielectric layer at a first ion range Rp. Thereafter, a second ion implantation process is carried out to implant a plurality of less-heavy ions into the dielectric layer at a second ion range Rp. The second ion range Rp is smaller than said first ion range Rp. A portion of the plural less-heavy ions are decelerated by the previously implanted heavy ions and are implanted into the semiconductor substrate, thereby forming a ultra-shallow junction containing the less-heavy ions. Subsequently, the dielectric layer is completely removed.
REFERENCES:
patent: 6191012 (2001-02-01), Ng et al.
patent: 6329704 (2001-12-01), Akatsu et al.
patent: 6387782 (2002-05-01), Akatsu et al.
Lindsay, Jr. Walter L
United Microelectronics Corp.
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