Method of fabricating thin film semiconductor integrated circuit

Details Method of fabricating thin film semiconductor integrated circuit Method of fabricating thin film semiconductor integrated circuit

1995-03-29

1997-04-15

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438275, 438981, 438303, 438762, H01L 2184

Patent

active

056209053

ABSTRACT:
In a semiconductor integrated circuit, a plurality of thin film transistors (TFTs) are formed on the same substrate having an insulating surface. Since gate electrodes formed in the TFTs are electrically insulated each other, voltages are applied independently to gate electrodes in an electrolytic solution during an anodization, to form an anodic oxide in at least both sides of each gate electrode. A thickness of the anodic oxide is changed in accordance with characteristics of the TFT. A width of high resistance regions formed in an active layer of each TFT is changed by ion doping using the anodic oxide having a desired thickness as a mask.

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