Method for providing short channel effect control using a...

Details Method for providing short channel effect control using a... Method for providing short channel effect control using a...

2006-09-19

2006-09-19

Lindsay, Jr., Walter L. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

07109555

ABSTRACT:
A method for fabricating a semiconductor device having improved short channel effects is disclosed. The method includes operations such as, forming a hard mask layer on the surface of a semiconductor substrate, printing a photoresist mask above the hard mask layer, performing an etch of trenches in the semiconductor substrate and removing the hard mask layer and the photoresist mask. Moreover, the method includes forming a first polysilicon layer, etching the first polysilicon layer, forming a spacer layer and forming a second polysilicon layer. In addition, the method includes performing a stacked gate etch on the second polysilicon layer, performing an SAS etch, performing a shallow source implant and forming the spacer between the first polysilicon layer and the second polysilicon layer. A silicide line is subsequently formed to connect device source regions.

REFERENCES:
patent: 6171939 (2001-01-01), Lin
patent: 6268247 (2001-07-01), Cremonesi et al.

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