Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-18
2006-04-18
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C365S063000, C365S072000
Reexamination Certificate
active
07030438
ABSTRACT:
In a large scale integrated DRAM in pursuit of micro fabrication, data line-word line coupling capacitances are unbalanced between paired data lines. A data line-word line imbalance generates large noise when the data lines are subjected to amplification, which is highly likely to invite deterioration of very small signals on the data lines and erroneous amplification of data. One or a few of a plurality of word lines connected to a plurality of memory cells connected to one data line are alternately connected to subword driver arrays arranged on the opposing sides of a memory array. Positive and negative word line noise components cancel each other in the subword drivers when the data lines are subjected to amplification, so that the word line noise can be reduced. Therefore, signals read out by sense amplifiers can be prevented from deterioration thereby to increase the reliability of memory operation.
REFERENCES:
patent: 5604697 (1997-02-01), Takahashi et al.
patent: 5636158 (1997-06-01), Kato et al.
patent: 5747849 (1998-05-01), Kuroda et al.
patent: 5896342 (1999-04-01), Nakao
patent: 6002636 (1999-12-01), Tsuchida et al.
patent: 6188596 (2001-02-01), Holst
patent: 6278628 (2001-08-01), Sekiguchi et al.
patent: 6426889 (2002-07-01), Sekiguchi et al.
patent: 62-11262 (1987-01-01), None
patent: 4-318392 (1992-11-01), None
Very Large Scale Integrated Memories, Baifukan, Nov. 5, 1994, 1st Edition, K. Itoh, pp. 214-217.
IEEE Journal of Solid-State Circuits, vol. 25, No. 3, 1990, pp. 778-789.
IEEE Journal of Solid-State Circuit, vol. SC-15, No. 5, Oct. 1980, H. Masuda et al, pp. 846-854.
Kajigaya Kazuhiko
Kimura Katsutaka
Sekiguchi Tomonori
Takahashi Tsugio
Takemura Riichiro
Hitachi , Ltd.
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Tran Minhloan
Tran Tan
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