Method and device for removing harmonics in semiconductor...

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

Reexamination Certificate

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C315S111410, C118S7230IR

Reexamination Certificate

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07102292

ABSTRACT:
A system and method for maintaining a plasma in a plasma region by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are reduced by placing RF energy absorbing resistive loads in energy receiving communication with the plasma, the resistive loads having a frequency dependent attenuation characteristic such that the resistive loads attenuate electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.

REFERENCES:
patent: 5302882 (1994-04-01), Miller
patent: 5325019 (1994-06-01), Miller et al.
patent: 5399999 (1995-03-01), Eisenhart
patent: 5747935 (1998-05-01), Porter et al.
patent: 5900062 (1999-05-01), Loewenhardt et al.
patent: 6700458 (2004-03-01), Mitrovic et al.
patent: 6812646 (2004-11-01), Windhorn et al.
patent: 2003/0057844 (2003-03-01), Windhorn et al.
patent: 1 193 746 (2002-04-01), None
patent: WO 93/05630 (1993-03-01), None
patent: WO 00/68985 (2000-11-01), None
patent: WO 01/61727 (2001-08-01), None
EPO, “International Search Report from PCT/US02/37326, dated Mar. 10, 2003, which is related to the instant application,”.

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