Three dimensional flash cell

Details Three dimensional flash cell Three dimensional flash cell

2006-03-28

2006-03-28

Blum, David S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07019353

ABSTRACT:
A floating gate memory cell includes isolation regions between adjacent cells, and a staggered pattern of columns of cells. Word lines are formed parallel to control gate structures.

REFERENCES:
patent: 5278438 (1994-01-01), Kim et al.
patent: 6157058 (2000-12-01), Ogura
patent: 6438028 (2002-08-01), Kobayashi et al.
patent: 2002/0028541 (2002-03-01), Lee et al.

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