Method for fabricating a III nitride film, an underlayer for...

Details Method for fabricating a III nitride film, an underlayer for... Method for fabricating a III nitride film, an underlayer for...

2006-01-24

2006-01-24

Turner, Archene (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S697000, C428S699000

Reexamination Certificate

active

06989202

ABSTRACT:
A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride including at least 50 atomic percent of elemental Al for each of the Group III elements of the underfilm Group III nitride. The surface of the underfilm includes a contoured portion and a flat region, and less than 50% of the surface is occupied by the flat region.

REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 6051849 (2000-04-01), Davis et al.
patent: 6091083 (2000-07-01), Hata et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6177688 (2001-01-01), Linthicum et al.
patent: 6239005 (2001-05-01), Sumiya et al.
patent: 6255004 (2001-07-01), Yoshida
patent: 6255198 (2001-07-01), Linthicum et al.
patent: 6270569 (2001-08-01), Shibata et al.
patent: 6291318 (2001-09-01), Webb et al.
patent: 6348096 (2002-02-01), Sunakawa et al.
patent: 6406931 (2002-06-01), Han et al.
patent: 6440823 (2002-08-01), Vaudo et al.
patent: 6531719 (2003-03-01), Shibata et al.
patent: 6534791 (2003-03-01), Hayashi et al.
patent: 6608327 (2003-08-01), Davis et al.
patent: 6649493 (2003-11-01), Asai et al.
patent: 6656269 (2003-12-01), Tomioka
patent: 6673149 (2004-01-01), Solomon et al.
patent: 2002/0190275 (2002-12-01), Shibata et al.
patent: 09219540 (1997-08-01), None
patent: 10125608 (1998-05-01), None
patent: 11354846 (1999-12-01), None
patent: 2001168045 (2001-06-01), None

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