Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-01-03

2006-01-03

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S351000, C257S377000, C257S384000, C257S412000, C257S413000, C257S455000, C257S456000

Reexamination Certificate

active

06982467

ABSTRACT:
A semiconductor device can be manufactured which has a low resistance, and device characteristics of which do not vary. The semiconductor device includes a silicon layer, a gate dielectric film formed on the silicon layer, a gate electrode formed on the gate dielectric film and including a nitrided metal silicide layer which is partially crystallized, and source and drain regions formed in a surface region of the silicon layer at both sides of the gate electrode.

REFERENCES:
Samavedam, S. B. et al., “Metal Gate MOSFETs With HfO2Gate Dielectric”, 2002 Symposium On VLSI Technology Digest of Technical Papers, pp. 24-25, (2002).
Park, D. G. et al., “Robust Ternary Metal Gate Electrodes for Dual gate CMOS Devices”, IEDM, pp. 671-674, (2001).

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3601296