Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

Filed on

2006-03-07

Date issued

2006-03-07

Examiner

Tran, Thien F. (Department: 2811)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S316000, C257S317000, C257S319000, C257S320000

Type

Reexamination Certificate

Status

active

Patent number

07009243

Description

ABSTRACT:
A semiconductor memory device comprises a first transistor including a source region, a drain region, a first channel region of a semiconductor material formed on an insulating film and connecting the source region and the drain region, and a gate electrode for controlling potential of the first channel region; a second transistor including a source region, a drain region, a second channel region of a semiconductor material connecting the source region and the drain region, a second gate electrode for controlling potential of the second channel region, and a charge storage region coupled with the second channel region by electrostatic capacity; wherein the source region of the second transistor is connected to a source line, one end of the source or the drain region of the first transistor is connected to the charge storage region of the second transistor, the other end of the source or the drain region of the first transistor is connected to a data line.

REFERENCES:
patent: 5753946 (1998-05-01), Naiki et al.
patent: 6100954 (2000-08-01), Kim
patent: 6218245 (2001-04-01), Xiang et al.
patent: 6376316 (2002-04-01), Shukuri et al.
patent: 2000-279525 (2000-09-01), None

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