Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-26
2006-09-26
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S631000, C438S637000, C438S675000
Reexamination Certificate
active
07112526
ABSTRACT:
In the method of manufacturing a semiconductor device, via holes and first trenches to form air gaps are concurrently formed in a first insulating film on a semiconductor substrate and a second insulating film is formed thereon. Thereafter, the second insulating film lying outside the area corresponding to the regions where the first trenches to form air gaps are formed is partially removed to form trenches for wiring by using a mask. A plurality of wirings are formed by filling in the trenches for wiring with a metal film. The second insulating film remaining in the regions where the first trenches to form air gaps are formed is then removed to form second trenches to form air gaps. Subsequently, in forming a third insulating film, air gaps are formed within the second trenches to form air gap.
REFERENCES:
patent: 6035530 (2000-03-01), Hong
patent: 6064118 (2000-05-01), Sasaki
patent: 6159845 (2000-12-01), Yew et al.
patent: 6406992 (2002-06-01), Mao et al.
patent: 6917109 (2005-07-01), Lur et al.
patent: 2001/0042863 (2001-11-01), Yamada et al.
patent: 10-335459 (1998-12-01), None
patent: 2000-183158 (2000-06-01), None
patent: 2000-208621 (2000-07-01), None
patent: 2001-085519 (2001-03-01), None
Bhusari, et al. “Fabrication of Air-Gaps Between Cu Interconnects for Low Intralevel k” D4. 8 MRS symposium proceedings vol. 612, 2000.
Brewster William M.
Hayes & Soloway P.C.
NEC Electronics Corporation
LandOfFree
Manufacturing of a semiconductor device with a reduced... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing of a semiconductor device with a reduced..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing of a semiconductor device with a reduced... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3599681