Microwave plasma processing apparatus

Details Microwave plasma processing apparatus Microwave plasma processing apparatus

1984-07-09

1985-04-23

Demers, Arthur P.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 156643, 156646, 156657, 204192R, 204192E, C23C 1500

Patent

active

045128685

ABSTRACT:
A microwave plasma processing apparatus for dry etching or ashing in a fabricating process for an integrated circuit semiconductor device is improved to provide a higher processing rate. The apparatus comprises a plasma generating region formed in a part of a waveguide through which microwave power is transmitted. A reactive gas is introduced into the plasma generating region and a plasma is generated by the microwave power applied thereto. A reacting region is coupled to the plasma generating region through a shielding member, wherein radicals of the reactive gas generated in the plasma enter the reacting region through the shielding member. The plasma generating region, the reacting region and an evacuating device comprise a vacuum system and establish a fixed gas pressure for the reactive gas. The radicals (active species) react with an object placed in the reacting region, forming volatile compounds which are removed by the evacuating device. The plasma is confined in the plasma generating region by the shielding means, thereby preventing damage of the object due to the plasma.

REFERENCES:
patent: 4192706 (1980-03-01), Horiike
patent: 4265730 (1981-05-01), Hirose et al.
patent: 4298419 (1981-11-01), Suzuki et al.
patent: 4430138 (1984-02-01), Suzuki et al.
patent: 4462863 (1984-07-01), Nishimatsu et al.

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