Method for improving the read signal in a memory having...

Details Method for improving the read signal in a memory having... Method for improving the read signal in a memory having...

2006-09-05

2006-09-05

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S189070

Reexamination Certificate

active

07102911

ABSTRACT:
A method for improving read signals in a memory including passive memory elements provided at crossover locations of word and bit lines, and in which stored digital information is represented by a respective resistance of the memory elements includes: determining logic levels of information bits to be written to the memory elements associated with a respective bit line; inverting the logic levels of the information bits if more than half of information bits to be written to the memory elements associated with the respective bit line have a logic level corresponding to a low-value resistance of the memory elements; writing the information bits to the memory elements; and generating an additional check bit, a logic level of which represents an inverted or non-inverted state of the information bits.

REFERENCES:
patent: 6317375 (2001-11-01), Perner
patent: 6570795 (2003-05-01), Fricke et al.

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