Method for producing III-IV group compound semiconductor...

Details Method for producing III-IV group compound semiconductor... Method for producing III-IV group compound semiconductor...

2006-05-23

2006-05-23

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S200000, C117S089000

Reexamination Certificate

active

07049212

ABSTRACT:
A method for producing a III-V group compound semiconductor layer comprises the steps of: forming a first III-V group compound semiconductor layer on a substrate in a reaction chamber; and supplying a III group material gas to the reaction chamber before or after the step of forming the first III-V group compound semiconductor layer to prevent re-evaporation of the III group gas in the reaction chamber.

REFERENCES:
patent: 5438951 (1995-08-01), Tachikawa et al.
patent: 5498568 (1996-03-01), Hosoba et al.
patent: 06-244122 (1994-09-01), None
patent: 08-203837 (1996-08-01), None
patent: 2000-216496 (2000-08-01), None

Affiliated with

Also associated with

Rating

Method for producing III-IV group compound semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing III-IV group compound semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing III-IV group compound semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3598060