Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-07-18
2006-07-18
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S486000, C438S487000
Reexamination Certificate
active
07078274
ABSTRACT:
In an active matrix type display having built-in drivers, a metal layer is formed over a portion of a transparent substrate and a buffer layer is provided over both the region where the metal layer is formed and over the region where the metal layer is not formed. Above the buffer layer, a first polycrystalline silicon film is provided over the region where the metal layer is formed and a second polycrystalline silicon film is provided over the region where the metal layer is not formed. A buffer layer with sufficient thickness and thermal capacity can provide sufficient distance between the active layers and the lower metal layer to alleviate thermal leakage caused by the metal layer. A first polycrystalline silicon film and a second polycrystalline film each having a proper grain size can be obtained through laser annealing applied under the same conditions on an amorphous silicon film formed over the buffer layer.
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Brewster William M.
Sanyo Electric Co,. Ltd.
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