Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-10
2006-01-10
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S300000, C257S303000
Reexamination Certificate
active
06984860
ABSTRACT:
A semiconductor device (10) is formed on a semiconductor substrate (12) whose surface (24) is formed with a trench (18). A capacitor (20) has a first plate (22) formed over the substrate surface with first and second portions lining first and second sidewalls (25) of the trench, respectively. A second plate (35, 38) is formed over the first plate and extends into the trench between the first and second portions.
REFERENCES:
patent: 4918503 (1990-04-01), Okuyama
patent: 5021842 (1991-06-01), Koyanagi
patent: 5214496 (1993-05-01), Sunami et al.
patent: 5624865 (1997-04-01), Schuegraf et al.
patent: 5866452 (1999-02-01), Willer et al.
patent: 5945704 (1999-08-01), Schrems et al.
patent: 6117726 (2000-09-01), Tsai et al.
patent: 6259149 (2001-07-01), Burkhardt et al.
patent: 6268620 (2001-07-01), Ouellet et al.
patent: 6410397 (2002-06-01), Ochiai et al.
patent: 6417063 (2002-07-01), Petter et al.
patent: 6437385 (2002-08-01), Bertin et al.
patent: 6455886 (2002-09-01), Mandelman et al.
patent: 2003/0228848 (2003-12-01), Escoffier et al.
Grivna Gordon M.
Shastri Sudhama C.
Wan Irene S.
Jackson Kevin B.
Semiconductor Components Industries L.L.C.
Tran Minhloan
Tran Tan
LandOfFree
Semiconductor device with high frequency parallel plate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with high frequency parallel plate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with high frequency parallel plate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3596667