Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-07-04
2006-07-04
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S765000, C438S770000, C438S788000
Reexamination Certificate
active
07071127
ABSTRACT:
A method and apparatus are disclosed for reducing the concentration of chlorine and/or other bound contaminants within a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant such as dichlorosilane (DCS) and an oxygen-providing reactant such as N2O. In one embodiment, a DCS-HTO film is annealed by heating N2O gas to a temperature in the range of about 825° C. to about 950° C. so as to trigger exothermic decomposition of the N2O gas and flowing the heated gas across the DCS-HTO film so that disassociated atomic oxygen radicals within the heated N2O gas can transfer disassociating energy to chlorine atoms bound within the DCS-HTO film and so that the atomic oxygen radicals can fill oxygen vacancies within the semiconductor-oxide matrix of DCS-HTO film. An improved ONO structure may be formed with the annealed DCS-HTO film for use in floating gate or other memory applications.
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Dong Zhong
Hsiao Chia-Shun
Jang Chuck
Gimlan Gideon
Le Dung A.
MacPherson Kwok & Chen & Heid LLP
ProMOS Technologies Inc.
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