Post TGZM surface etch

Details Post TGZM surface etch Post TGZM surface etch

1975-11-26

1977-08-16

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148187, 148188, 156657, 156661, 156662, 357 50, H01L 21306

Patent

active

040424480

ABSTRACT:
Disclosed is a technique useful in the manufacture of semiconductor devices. A semiconductor wafer is provided and isolation regions are formed therein by the temperature gradient zone melting process. A mask is applied to the surface of the wafer, but the portions of the surface near the isolation regions are left exposed. An etching step follows which removes a small amount of material from the surface of the isolation regions to smooth irregularities formed there during the zone melting process.

REFERENCES:
patent: 3272748 (1966-09-01), Szkudlapski
patent: 3379584 (1968-04-01), Bean et al.
patent: 3608186 (1971-09-01), Hutson
patent: 3706129 (1972-12-01), McCann
patent: 3901736 (1975-08-01), Anthony et al.
patent: 3920482 (1975-11-01), Russell

Affiliated with

Also associated with

Rating

Post TGZM surface etch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Post TGZM surface etch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Post TGZM surface etch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-359452